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| AGR09090EF 90 W, 865 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), cellular, and multicarrier class AB power amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance and reliability. Packaged in an industry-standard package and capable of delivering a minimum output power of 90 W, it is ideally suited for today's wireless base station RF power amplifier applications. Table 1. Thermal Characteristics (921 MHz--960 MHz, and 865 MHz--895 MHz) Parameter Thermal Resistance, Junction to Case: AGR09090EF Sym R JC Value 0.80 Unit C/W Table 2. Absolute Maximum Ratings* (921 MHz--960 MHz, and 865 MHz--895 MHz) Parameter Drain-source Voltage Gate-source Voltage Drain Current--Continuous Total Dissipation at TC = 25 C: AGR09090EF Derate Above 25 C: AGR09090EF Operating Junction Temperature Storage Temperature Range Sym Value 65 VDSS VGS -0.5, +15 8.5 ID PD -- TJ 219 1.25 200 Unit Vdc Vdc Adc W W/C C C Figure 1. AGR09090EF (Flanged) Package GSM Features Typical performance ratings for GSM EDGE (f = 941 MHz, POUT = 40 W): -- Modulation spectrum: @ 400 kHz = -60 dBc. @ 600 kHz = -72 dBc. -- Error vector magnitude (EVM) = 2.3%. Typical performance over entire GSM band: -- P1dB: 105 W typical. -- Power gain: @ P1dB = 17.8 dB. -- Efficiency @ P1dB = 60% typical. -- Return loss: -10 dB. TSTG -65, +150 * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* (921 MHz--960 MHz, and 865 MHz--895 MHz) Cellular Features Typical performance ratings (f = 880 MHz, POUT = 40 W): -- Modulation spectrum: @ 400 kHz = -60 dBc. @ 600 kHz = -72 dBc. -- Error vector magnitude (EVM) = 2.3%. Typical performance over entire GSM band: -- P1dB: 105 W typical. -- Power gain: @ P1dB = 17.6 dB. -- Efficiency @ P1dB = 60% typical. -- Return loss: -10 dB. AGR09090EF HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. GSM/Cellular Features High-reliability, gold-metalization process. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. 90 W minimum output power. AGR09090EF 90 W, 865 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics (921 MHz--960 MHz, 865 MHz--895 MHz) Parameter Off Characteristics 200 Drain-source Breakdown Voltage (VGS = 0, ID = 300 A) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 1.0 A) Gate Threshold Voltage (VDS = 10 V, ID = 400 A) Gate Quiescent Voltage (VDS = 26 V, IDQ = 700 mA) Drain-source On-voltage (VGS = 10 V, ID = 1.0 A) Table 5. RF Characteristics (921 MHz--960 MHz) Parameter Dynamic Characteristics Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Power Gain (VDS = 26 V, POUT = 50 W, IDQ = 700 mA) Drain Efficiency (VDS = 26 V, POUT = P1dB, IDQ = 700 mA) EDGE Linearity Characterization2 (POUT = 40 W, f = 941 MHz, VDS = 26 V, IDQ = 700 mA) Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Output Power (VDS = 26 V, 1 dB gain compression, IDQ = 700 mA) Input Return Loss Ruggedness (VDS = 26 V, POUT = 90 W, IDQ = 700 mA, VSWR = 10:1, all angles) 1. Across full GSM band, 921 MHz--960 MHz. 2. Measured according to 3GPP GSM 05.05. Symbol V(BR)DSS IGSS IDSS GFS VGS(TH) VGS(Q) VDS(ON) Min 65 -- -- -- -- -- -- Typ -- -- -- 6 -- 3.6 0.12 Max -- 2.6 150 8 -- 4.8 -- -- Unit Vdc Adc Adc S Vdc Vdc Vdc Symbol COSS CRSS Min -- -- Typ 48 2.3 Max -- -- Unit pF pF Functional Tests (in Supplied Test Fixture) Agere Systems Supplied Test Fixture)1 GL 17 50 17.8 60 -- -- dB % -- -- P1dB RL -- -- 90 -- -60 -72 105 -10 -- -- -- -- dBc dBc W dB No degradation in output power. Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics (continued) Table 6. RF Characteristics (865 MHz--895 MHz) Parameter Dynamic Characteristics Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Power Gain (VDS = 26 V, POUT = 50 W, IDQ = 700 mA) Drain Efficiency (VDS = 26 V, POUT = P1dB, IDQ = 700 mA) EDGE Linearity Characterization2 (POUT = 40 W, f = 880 MHz, VDS = 26 V, IDQ = 700 mA) Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Output Power (VDS = 26 V, 1 dB gain compression, IDQ = 700 mA) Input Return Loss Ruggedness (VDS = 26 V, POUT = 90 W, IDQ = 700 mA, VSWR = 10:1, all angles) 1. Across full cellular band, 865 MHz--895 MHz. 2. Measured according to 3GPP GSM 05.05. Symbol COSS CRSS Min -- -- Typ 48 2.3 Max -- -- Unit pF pF Functional Tests (in Agere Systems Supplied Test Fixture)1 GL -- -- 17.6 60 -- -- dB % -- -- P1dB RL -- -- -- -- -60 -72 105 -10 -- -- -- -- dBc dBc W dB No degradation in output power. Agere Systems Inc. AGR09090EF 90 W, 865 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09090EF, 921 MHz--960 MHz Z17 C16 C17 C18 C19 C20 VGG Z15 Z16 Z18 Z19 Z20 Z21 C15 Z22 RF OUTPUT C10 C22 C9 C8 C7 C6 R1 C23 Z6 C13 Z14 C21 Z13 Z12 C14 Z11 VDD R2 FB1 C12 C11 2 1 DUT 3 PINS: 1. DRAIN 2. GATE 3. SOURCE RF INPUT Z23 Z1 Z24 C1 Z2 Z3 Z4 C2 Z5 Z7 Z8 C3 Z9 C4 Z10 C5 A. Schematic, 921 MHz--960 MHz Parts List: Microstrip line: Z1 0.035 in. x 0.066 in.; Z2 0.120 in. x 0.066 in.; Z3 0.475 in. x 0.100 in.; Z4 0.050 in. x 0.100 in.; Z5 0.129 in. x 0.100 in.; Z6 0.958 in. x 0.050 in.; Z7 0.629 in. x 0.532 in.; Z8 0.050 in. x 0.532 in.; Z9 0.100 in. x 0.532 in.; Z10 0.050 in. x 0.532 in.; Z11 0.412 in. x 0.532 in.; Z12 0.050 in. x 0.532 in.; Z13 0.122 in. x 0.532 in.; Z15 0.050 in. x 0.532 in.; Z16 0.173 in. x 0.532 in.; Z17 1.916 in. x 0.050 in.; Z18 0.734 in. x 0.100 in.; Z19 0.050 in. x 0.100 in.; Z20 0.086 in. x 0.100 in.; Z21 0.208 in. x 0.066 in.; Z22 0.208 in. x 0.066 in.; Z23 0.278 in. x 0.066 in.; Z24 0.305 x 0.050 ATC (R) chip capacitor: C1, C6, C15, C16: 47 pF 100B470JW500X; C2: 2.7 pF 100B2R7JW500X; C3: 2.0 pF 100B2R0CW C4, C5, C11, C12: 12 pF 100B120JW500X; C7: 22 pF 100B220JW500X; C13, C21: 1 pF 100B1R0BW500X; C14: 4.7 pF 100B4R7CW; C17: 10 pF 100B100JW500X; C23: 8.2 pF 100A8R2CW. Sprague(R) tantalum surface-mount chip capacitor: C10, C20 10 F, 35 V; C22 22 F, 35 V. Murata (R) 0805 size chip capacitor: C8, C18: 0.01 F GRM40X7R103K100AL. Kemet(R) 1206 size chip capacitor: C9, C19: 0.1 F C1206104K5RAC7800. 1206 size chip resistor: R1 51 RM73B2B510, R2 1 k RM73B2B130. Kreger(R) ferrite bead: FB1 2743D19447. (R) Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout, 921 MHz--960 MHz Figure 2. AGR09090EF Test Circuit, 921 MHz--960 MHz AGR09090EF 90 W, 865 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Test Circuit Illustrations for AGR09090EF, 865 MHz--895 MHz Z17 C16 C17 C18 C19 C20 VGG Z15 Z16 Z18 Z19 Z20 Z21 C15 Z22 RF OUTPUT C10 C22 C9 C8 C7 C6 R1 Z6 C13 Z14 C21 Z13 Z12 C14 Z11 VDD R2 FB1 C12 C11 2 1 DUT 3 PINS: 1. DRAIN 2. GATE 3. SOURCE RF INPUT Z1 C1 Z2 Z3 Z4 C2 Z5 Z7 Z8 C3 Z9 C4 Z10 C5 A. Schematic, 865 MHz--895 MHz Parts List: Microstrip line: Z1 0.193 in. x 0.066 in.; Z2 0.321 in. x 0.066 in.; Z3 0.179 in. x 0.100 in.; Z4 0.050 in. x 0.100 in.; Z5 0.425 in. x 0.100 in.; Z6 0.958 in. x 0.050 in.; Z7 0.629 in. x 0.532 in.; Z8 0.050 in. x 0.532 in.; Z9 0.100 in. x 0.532 in.; Z10 0.050 in. x 0.532 in.; Z11 0.412 in. x 0.532 in.; Z12 0.050 in. x 0.532 in.; Z13 0.122 in. x 0.532 in.; Z15 0.050 in. x 0.532 in.; Z16 0.173 in. x 0.532 in.; Z17 1.916 in. x 0.050 in.; Z18 0.656 in. x 0.100 in.; Z19 0.050 in. x 0.100 in.; Z20 0.114 in. x 0.100 in.; Z21 0.208 in. x 0.066 in.; Z22 0.208 in. x 0.066 in. ATC (R) chip capacitor: C1, C6, C15, C16: 47 pF 100B470JW500X; C2, 2.7 pF 100B2R7JW500X; C3, C17, 10 pF 100B100JW500X; C4, C5, C11, C12: 12 pF 100B120JW500X; C7, 22 pF 100B220JW500X; C13, C21: 1 pF 100B1R0BW500X; C14, 4.7 pF 100B4R7JW500X. Sprague (R) tantalum surface-mount chip capacitor: C10, C20 10 F, 35 V; C22 22 F, 35 V. Kemet(R) 1206 size chip capacitor: C9, C19: 0.1 F C1206104K5RAC7800. Murata (R) 0805 size chip capacitor: C8, C18: 0.01 F GRM40X7R103K100AL. 1206 size chip resistor: R1 51 RM73B2B510, R2 1 k RM73B2B130. Kreger(R) ferrite bead: FB1 2743D19447. (R) Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout, 865 MHz--895 MHz Figure 3. AGR09090EF Test Circuit, 865 MHz--895 MHz AGR09090EF 90 W, 865 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics 0.0 > WA VELE N GTH S TOW A RD 0.0 0.49 0.48 180 170 U CT IN D 90 0.4 0.9 0.1 0.2 0.3 0.5 0.6 0.7 1.0 1.2 1.6 3.0 4.0 0.8 1.4 1.8 2.0 5.0 10 20 LOA D < 0.2 0.49 OW A RD 7 HST 0.4 N GT -170 EL E AV W 0 < -90 -16 0.1 0.4 0.48 ) / Yo (-jB CE 0.6 -85 AN PT CE US ES 6 0.4 4 0.0 0 -15 -80 IN DU 0.3 I CT ,O o) 5 0.4 -70 06 0. -65 0.6 -60 1.6 0.7 1.4 0.8 1.2 5 0.9 -5 1.0 0 -5 5 -4 MHz (f) 921 (f1) 940.5 960 (f3) ZS (Complex Source Impedance) 0.731 - j1.676 0.869 - j1.611 0.912 - j1.569 GATE (2) ZS ZL (Complex Optimum Load Impedance) 1.478 + j0.538 1.393 + j0.657 1.300 + j0.761 DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 4. Series Equivalent Input and Output Impedances, 921 MHz--960 MHz F 0. 32 0. 1.8 18 0 -5 -25 4 4 0. 5 0. 0.3 0.1 3 2. 0 7 -30 -60 0.3 0.1 4 6 -3 -70 5 0.35 0.15 0.36 0.14 -80 -4 0 0.37 0.13 0.4 0.2 -90 0.12 0.38 0.11 -100 0.39 CA P AC I TI 0.1 0.4 -110 VE RE AC TA N 0.0 0 9 .41 -12 CE CO M 0 0.0 PO N 0.4 8 2 EN T (-j -1 0 .4 Z X/ 40 -20 5 0.0 3. 0 Z0 = 4 -75 0.6 f1 R -15 V 4.0 0.8 ZS 5.0 1. 0 f3 1. 0 0.2 -10 0. 8 50 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 50 20 10 0.2 ZL f1 0.4 f3 0. 8 0.6 10 0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN D EG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM D EGR EES L E OF ANG -1 0. 07 30 0. 43 0.1 20 50 -20 0.2 2 0.2 8 0.2 9 0.2 1 -30 0.3 0.2 -4 0 0. 19 0. 31 AGR09090EF 90 W, 865 MHz --960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 0.0 > WA VELE N GTH S TOW A RD 0.0 0.49 0.48 180 170 U CT IN D 90 0.1 0.2 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 0.3 3.0 4.0 LOA D < 0.2 0.49 OW A RD 7 HST 0.4 N GT -170 EL E AV W < -90 -160 0.1 ) / Yo (-jB CE -85 AN PT CE US ES 1. 0 0.2 4 0.0 0 -15 -80 IV CT 0.4 IN DU 0.3 6 ,O o) 5 5 0.4 -70 06 0. 0 -65 .5 0.6 -60 1.6 0.7 1.4 0.8 1.2 5 0.9 -5 1.0 0 -5 5 -4 MHz (f) 865 (f1) 880 895 (f3) ZS (Complex Source Impedance) 0.524 - j0.947 0.516 - j0.835 0.477 - j0.738 GATE (2) ZS ZL (Complex Optimum Load Impedance) 1.654 - j0.066 1.656 - j0.006 1.639 + j0.043 DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 5. Series Equivalent Input and Output Impedances, 865 MHz--895 MHz F 0. 32 0. 1.8 18 0 -5 -25 4 4 0. 0.3 0.1 3 2. 0 7 -30 -60 0.3 0.1 4 6 - 35 -70 0.35 0.15 0.36 0.14 -80 -4 0 0.37 0.13 0.4 0.2 -90 0.12 0.38 0.11 -100 0.39 CA P AC I TI 0.1 0.4 -110 VE RE AC TA N 0.0 0.4 1 9 -12 CE CO M 0 0.0 PO N 0.4 8 2 EN T (-j -1 0. 40 4 Z X/ -20 0.0 3. 0 Z0 = 4 -75 R 5.0 -15 4.0 1. 0 f1 0.8 0.6 -10 ZS 0.48 0.6 0. 8 10 f3 0.4 50 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) f1 5.0 10 20 50 20 0.2 f3 ZL 0. 8 0.6 0.4 10 0.1 -1 20 0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN D EG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM D EGR EES L E OF ANG 50 -20 0.2 2 0.2 8 0.2 9 0.2 1 -30 0.3 0.2 -4 0 0. 19 0. 31 0. 07 30 0. 43 AGR09090EF 90 W, 865 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 19.0 TYPICAL DATA IDQ = 1000 mA 18.5 IDQ = 1100 mA 18.0 POWER GAIN (dB)Z 17.5 IDQ = 900 mA 17.0 IDQ = 800 mA 16.5 IDQ = 700 mA 16.0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 POUT (W)Z Test Conditions: VDD = 26 V, FREQUENCY = 940.5 MHz. Figure 6. Power Gain vs. POUT, 921 MHz--960 MHz TYPICAL DATA -30.0 3.5 -40.0 3.0 -50.0 2.5 -60.0 2.0 -70.0 1.5 -80.0 +/- 600 kHz -90.0 EVM -100.0 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 1.0 0.5 0.0 POUT (dBm)Z Test Conditions: VDD = 26 V, FREQUENCY = 940.5 MHz, IDQ = 700 mA. RES BW: 30 kHz, VIDEO BW: 300 Hz, EDGE FORMAT = 3GPP GSM 05.05. Figure 7. Modulation Spectrum and EVM vs. POUT, 921 MHz--960 MHz ERROR VECTOR MODULATION (%) Z +/- 400 kHz MODULATION SPECTRUM (dBc) Z AGR09090EF W, 865 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 70 65 IDQ = 800 mA 60 55 50 TYPICAL DATA EFFICIENCY (%)Z 45 40 35 30 25 IDQ = 1100 mA 20 15 10 5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 POUT (W)Z Test Conditions: VDD = 26 V, FREQUENCY = 940.5 MHz. Figure 8. Efficiency vs. POUT, 921 MHz--960 MHz TYPICAL DATA +/- 400 kHz -58 -59 -60 -61 -62 57 54 51 48 45 MODULATION SPECTRUM (dBc) Z -64 -65 -66 -67 -68 -69 -70 -71 -72 -73 -74 -75 -76 920 925 930 935 940 945 950 955 +/- 600 kHz GAIN EFFICIENCY 39 36 33 30 27 24 21 18 15 12 9 6 3 960 FREQUENCY (MHz)Z Test Conditions: VDD = 26 V, EDGE FORMAT, IDQ = 700 mA, POUT = 40 W. Figure 9. Modulation Spectrum, Gain, and Efficiency vs. Frequency, 921 MHz--960 MHz GAIN (dB) AND EFFICIENCY (%) Z -63 42 AGR09090EF 90 W, 865 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) 18.5 PG @ POUT = 59 W TYPICAL DATA -6 18.0 -8 17.5 -10 17.0 -12 16.5 -14 16.0 PG @ POUT = 114 W 15.5 -16 RETURN LOSS -18 15.0 -20 14.5 -22 14.0 -24 13.5 920 925 930 935 940 945 950 955 -26 960 FREQUENCY (MHz)Z Test Conditions: VDD = 26 V. Figure 10. Power Gain and Return Loss vs. Frequency, 921 MHz--960 MHz 140 130 POUT @ 921 MHz 120 110 100 90 POUT @ 960 MHz POUT @ 940.5 MHz TYPICAL DATA 100 95 90 85 80 75 POUT (W)Z 80 70 60 50 40 30 20 10 0 0.5 1.0 EFFICIENCY @ 960 MHz EFFICIENCY @ 940.5 MHz 70 65 60 55 50 45 EFFICIENCY @ 921 MHz 40 35 30 1.5 PIN (W)Z 2.0 2.5 3.0 Test Conditions: VDD = 26 V. Figure 11. Power Out and Efficiency vs. Input Power, 921 MHz--960 MHz EFFICIENCY (%)Z RETURN LOSS (dB)Z POWER GAIN (dB)Z AGR09090EF 90 W, 865 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) TYPICAL DATA 19.0 IDQ = 1000 mA 18.5 IDQ = 900 mA 18.0 POWER GAIN (dB)Z 17.5 IDQ = 800 mA 17.0 IDQ = 600 mA 16.5 IDQ = 700 mA 16.0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 POUT (W)Z Test Conditions: VDD = 26 V, FREQUENCY = 880 MHz. Figure 12. Power Gain vs. POUT, 865 MHz--895 MHz TYPICAL DATA -30 3.5 -40 3.0 MODULATION SPECTRUM (dBc)Z -50 +/- 400 kHz 2.5 -60 2.0 -70 1.5 -80 +/- 600 kHz 1.0 -90 EVM 0.5 -100 27 28 29 30 31 32 33 34 35 36 37 38 POUT (dBm) 39 40 41 42 43 44 45 46 47 0.0 Test Conditions: VDD = 26 V, FREQUENCY = 880 MHz, IDQ = 700 mA. RES BW: 30 kHz, VIDEO BW: 300 Hz, EDGE FORMAT = 3GPP GSM 05.05. Figure 13. Modulation Spectrum and EVM vs. POUT, 865 MHz--895 MHz ERROR VECTOR MODULATION (%)Z AGR09090EF 90 W, 865 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) TYPICAL DATA 70 65 60 55 50 EFFICIENCY (%)Z 45 40 35 30 25 20 15 10 5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 POUT (W)Z IDQ = 1000 mA IDQ = 700 mA Test Conditions: VDD = 26 V, FREQUENCY = 880 MHz. Figure 14. Efficiency vs. POUT, 865 MHz--895 MHz TYPICAL DATA -56 -57 -58 -59 -60 -61 MODULATION SPECTRUM (dBc)Z -62 -63 -64 -65 -66 -67 -68 -69 -70 -71 -72 -73 -74 -75 -76 865 870 875 880 FREQUENCY (MHz)Z 885 890 +/- 600 kHz GAIN EFFICIENCY +/- 400 kHz 60 57 54 51 48 45 GAIN (dB) AND EFFICIENCY (%)Z 42 39 36 33 30 27 24 21 18 15 12 9 6 3 0 895 Test Conditions: VDD = 26 V, EDGE FORMAT, IDQ = 700 mA, POUT = 40 W. Figure 15. Modulation Spectrum, Gain, and Efficiency vs. Frequency, 865 MHz--895 MHz AGR09090EF 90 W, 865 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) TYPICAL DATA 18.5 PG @ POUT = 59 W 18.0 -3 0 17.5 -6 17.0 POWER GAIN (dB)Z PG @ POUT = 109 W -9 RETURN LOSS (dB)Z EFFICIENCY (%)Z 16.5 -12 16.0 -15 15.5 -18 15.0 RETURN LOSS -21 14.5 -24 14.0 -27 13.5 865 870 875 880 FREQUENCY (MHz)Z 885 890 -30 895 Test Conditions: VDD = 26 V. Figure 16. Power Gain and Return Loss vs. Frequency, 865 MHz--895 MHz TYPICAL DATA 140.0 130.0 120.0 110.0 100.0 90.0 POUT (W)Z 80.0 70.0 60.0 50.0 40.0 30.0 20.0 10.0 0.0 0.5 1.0 1.5 PIN (W)Z 2.0 2.5 3.0 EFFICIENCY @ 895 MHz EFFICIENCY @ 880 MHz EFFICIENCY @ 865 MHz 50 45 40 35 30 POUT @ 895 MHz POUT @ 865 MHz POUT @ 880 MHz 100 95 90 85 80 75 70 65 60 55 Test Conditions: VDD = 26 V. Figure 17. Power Out and Efficiency vs. Input Power, 865 MHz--895 MHz AGR09090EF 90 W, 865 MHz--960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics (continued) TYPICAL DATA 18.5 PG @ POUT = 59 W 18.0 -3 0 17.5 -6 17.0 POWER GAIN (dB)Z PG @ POUT = 109 W -9 RETURN LOSS (dB)Z EFFICIENCY (%)Z 16.5 -12 16.0 -15 15.5 -18 15.0 RETURN LOSS -21 14.5 -24 14.0 -27 13.5 865 870 875 880 FREQUENCY (MHz)Z 885 890 -30 895 Test Conditions: VDD = 26 V. Figure 16. Power Gain and Return Loss vs. Frequency, 865 MHz--895 MHz TYPICAL DATA 140.0 130.0 120.0 110.0 100.0 90.0 POUT (W)Z 80.0 70.0 60.0 50.0 40.0 30.0 20.0 10.0 0.0 0.5 1.0 1.5 PIN (W)Z 2.0 2.5 3.0 EFFICIENCY @ 895 MHz EFFICIENCY @ 880 MHz EFFICIENCY @ 865 MHz 50 45 40 35 30 POUT @ 895 MHz POUT @ 865 MHz POUT @ 880 MHz 100 95 90 85 80 75 70 65 60 55 Test Conditions: VDD = 26 V. Figure 17. Power Out and Efficiency vs. Input Power, 865 MHz--895 MHz |
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